field-effect transistor

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Related to FETS: MOSFET, Bjt, Fgets

field-effect transistor

n
(Electronics) a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is controlled by the electric field arising from a voltage applied between source and gate. Abbreviation: FET See also JFET, IGFET
Collins English Dictionary – Complete and Unabridged, 12th Edition 2014 © HarperCollins Publishers 1991, 1994, 1998, 2000, 2003, 2006, 2007, 2009, 2011, 2014
ThesaurusAntonymsRelated WordsSynonymsLegend:
Noun1.field-effect transistor - a transistor in which most current flows in a channel whose effective resistance can be controlled by a transverse electric field
FET
electronic transistor, junction transistor, transistor - a semiconductor device capable of amplification
Based on WordNet 3.0, Farlex clipart collection. © 2003-2012 Princeton University, Farlex Inc.
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feted by the owner of Vaux, seemed, by the obstinate persistence of his gloomy thoughts, to do his utmost to recall Louis's attention, which the magnificence of the spectacle was already, in his opinion, too easily diverting.
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In Edinburgh he was feasted and feted. "You cannot imagine," wrote Steele, "the civilities and honours I had done me there.
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Today I should be sitting in the place of honor at the banquet board of one of London's most exclusive clubs, feted and lionized.
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I know that, because I was there on duty, having to interview one of the savants of the Academy of Philadelphia, who was being feted there.
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Her figure, but partially concealed by the soft deerskin, was all curves of symmetry and youthful grace, while her features might easily have been the envy of the most feted of Continental beauties.
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He could drink hard and show little trace of it; but that evening, had his mate Scanlan not been at hand to lead him home, the feted hero would surely have spent his night under the bar.
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They also use a limited choice of integrated FETs, further compromising performance, cost and power.
SILICON LABS DEBUTS CMOS-BASED ISOLATED FET DRIVER
Using equivalent linear circuit models, sizes of the proposed antennas with the PIN diodes and FETs are then optimized to achieve beam switching capability.
A compact beam reconfigurable antenna for symmetric beam switching
The principle behind any FET-based biosensor is similar to the FETs used in digital circuit applications, except that the physical gate is removed and the work of the gate is carried out by charged versions of the biomolecules it intends to detect.
Ultra-sensitive electrical biosensor unlocks potential for instant diagnostic tools
Fujitsu Laboratories developed digital control technology that adjusts the on and off intervals for two FETs. As the FET's cycle speed increases with larger currents, the periods when both FETs are off tend to be longer, increasing the dead-time loss.
Fujitsu Develops a 2.3kW High-capacity Power Supply Unit for Servers Offering a World-leading Conversion Efficiency Rate of 94.8%

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